2SC6096-TD-E - onsemi

Manufacturer Part Number

2SC6096-TD-E

Manufacturer

onsemi

Introduction

High-performance NPN bipolar junction transistor (BJT) designed for general-purpose amplifier and switching applications.

Product Features and Performance

Capable of handling up to 2A of collector current

High transition frequency of 300MHz

Low collector-emitter saturation voltage of 150mV @ 100mA, 1A

Broad operating temperature range up to 150°C

Product Advantages

Excellent high-frequency performance

Efficient power handling

Reliable operation in high-temperature environments

Small surface-mount package

Key Technical Parameters

Maximum Collector Current (Ic): 2A

Maximum Collector-Emitter Voltage (VCEO): 100V

Minimum DC Current Gain (hFE): 300 @ 100mA, 5V

Transition Frequency (fT): 300MHz

Quality and Safety Features

RoHS3 compliant

Optimized for reliable, long-term operation

Compatibility

Compatible with a wide range of electronic circuits and systems

Application Areas

General-purpose amplifier and switching applications

Power supply and control circuits

Automotive electronics

Industrial automation

Product Lifecycle

This product is currently in active production and not nearing discontinuation.

Replacement or upgraded options may become available in the future as technology advances.

Key Reasons to Choose This Product

Excellent high-frequency performance for efficient, high-speed applications

Efficient power handling capabilities for demanding operating conditions

Reliable operation in high-temperature environments

Compact surface-mount package for space-constrained designs

RoHS3 compliance for environmentally-friendly use