Manufacturer Part Number
2SC5227A-5-TB-E
Manufacturer
onsemi
Introduction
The 2SC5227A-5-TB-E is a high-performance NPN bipolar junction transistor (BJT) designed for radio frequency (RF) applications.
Product Features and Performance
Operates at high frequencies up to 7GHz
Provides a high gain of 12dB
Offers a low noise figure of 1dB at 1GHz
Capable of handling a maximum collector current of 70mA
Withstands a maximum collector-emitter voltage of 10V
Rated for a maximum power dissipation of 200mW
Product Advantages
Excellent high-frequency performance
Low noise characteristics
Compact surface mount package
Suitable for a wide range of RF applications
Key Technical Parameters
Transistor Type: NPN
DC Current Gain (hFE): 135 @ 20mA, 5V
Transition Frequency (fT): 7GHz
Gain: 12dB
Noise Figure: 1dB @ 1GHz
Maximum Collector Current (Ic): 70mA
Maximum Collector-Emitter Voltage (VCEO): 10V
Maximum Power Dissipation: 200mW
Operating Temperature Range: -55°C to +150°C
Quality and Safety Features
RoHS3 compliant
AEC-Q101 qualified
Compatibility
Suitable for surface mount applications
Compatible with standard TO-236-3, SC-59, and SOT-23-3 packages
Application Areas
RF amplifiers
Mixers
Oscillators
Switches
Wireless communication systems
Product Lifecycle
Currently in production
No plans for discontinuation or replacement at this time
Several Key Reasons to Choose This Product
High-frequency performance up to 7GHz
Low noise figure for improved signal quality
Compact surface mount package for easy integration
Wide operating temperature range of -55°C to +150°C
RoHS3 compliance and AEC-Q101 qualification for reliability and safety