2SC5227A-4-TB-E - onsemi

Manufacturer Part Number

2SC5227A-4-TB-E

Manufacturer

onsemi

Introduction

High-performance NPN silicon bipolar transistor designed for use in radio frequency (RF) and microwave applications.

Product Features and Performance

Surface mount package for compact design

Optimized for RF/microwave applications

Capable of operating at frequencies up to 7GHz

High transition frequency of 7GHz

Excellent gain and noise figure performance

Product Advantages

Compact surface mount package for efficient board space utilization

High-frequency performance suitable for RF/microwave circuits

Strong technical specifications for reliable operation

Key Technical Parameters

Collector-Emitter Breakdown Voltage: 10V (max)

Collector Current: 70mA (max)

Power Dissipation: 200mW

Operating Temperature: 150°C (max junction temperature)

DC Current Gain: 90 (min) @ 20mA, 5V

Frequency Transition: 7GHz

Gain: 12dB

Noise Figure: 1dB (typical) @ 1GHz

Quality and Safety Features

RoHS3 compliant

Manufactured using high-quality, reliable processes

Compatibility

Suitable for surface mount applications

Compatible with standard TO-236-3, SC-59, SOT-23-3 package types

Application Areas

RF and microwave amplifier circuits

Wireless communication systems

Test and measurement equipment

Industrial control and automation

Product Lifecycle

Current production model, no plans for discontinuation

Replacement and upgrade options available from onsemi

Key Reasons to Choose This Product

Excellent high-frequency performance for RF/microwave applications

Compact surface mount packaging for efficient board space utilization

Reliable operation with high-quality manufacturing and RoHS compliance

Broad compatibility with standard package types

Ongoing product support and availability of replacement/upgrade options