Manufacturer Part Number
2SC4027S-H
Manufacturer
onsemi
Introduction
The 2SC4027S-H is a high-voltage, high-power NPN bipolar junction transistor (BJT) designed for use in various power electronics and industrial applications.
Product Features and Performance
High voltage rating of 160V Collector-Emitter Breakdown Voltage
High power handling capacity of 1W
High collector current rating of 1.5A
High DC current gain (hFE) of 140 minimum at 100mA, 5V
High transition frequency of 120MHz
Rugged and reliable through-hole TO-251-3 package
Product Advantages
Suitable for use in high-voltage, high-current power supplies, motor drives, and industrial control circuits
Excellent electrical characteristics for power amplification and switching applications
Robust package design for reliable operation in harsh environments
Key Technical Parameters
Collector-Emitter Breakdown Voltage (VCEO): 160V
Collector Current (IC): 1.5A
Power Dissipation (Pd): 1W
DC Current Gain (hFE): 140 minimum at 100mA, 5V
Transition Frequency (fT): 120MHz
Quality and Safety Features
RoHS3 compliant for environmental responsibility
Reliable through-hole mounting for secure installation
Compatibility
The 2SC4027S-H is a direct replacement for the standard 2SC4027 transistor, with the same pinout and package dimensions.
Application Areas
Power amplifiers
Motor drives
Industrial control circuits
Power supplies
Switching regulators
Product Lifecycle
The 2SC4027S-H is an active and available product from onsemi. There are no known plans for discontinuation, and suitable replacement or upgrade options are available if needed.
Key Reasons to Choose This Product
High voltage and current handling capabilities for demanding power electronics applications
Excellent electrical performance with high gain and high-frequency operation
Rugged through-hole package design for reliable operation in industrial environments
RoHS3 compliance for environmentally-friendly use
Compatibility with the standard 2SC4027 transistor for easy replacement and integration