2SC4027S-E - onsemi

Manufacturer Part Number

2SC4027S-E

Manufacturer

onsemi

Introduction

High-voltage NPN silicon bipolar transistor

Product Features and Performance

Capable of handling up to 160V collector-emitter voltage

Capable of handling up to 1.5A collector current

Transition frequency of 120MHz

Power rating of 1W

High DC current gain (hFE) of at least 100 at 100mA, 5V

Low collector-emitter saturation voltage of 450mV at 50mA, 500mA

Product Advantages

Suitable for high-voltage, high-current applications

High-frequency performance enables use in switching circuits

Robust design for reliable operation

Key Technical Parameters

Collector-Emitter Breakdown Voltage (VCEO): 160V

Collector Current (IC): 1.5A

Collector Cutoff Current (ICBO): 1A

Collector-Emitter Saturation Voltage (VCE(sat)): 450mV @ 50mA, 500mA

DC Current Gain (hFE): 100 min. @ 100mA, 5V

Transition Frequency (fT): 120MHz

Quality and Safety Features

RoHS3 compliant

Suitable for high-temperature operation up to 150°C

Compatibility

Through-hole package (TO-251-3 Short Leads, IPak, TO-251AA)

Application Areas

High-voltage, high-current switching circuits

Power supplies

Motor control

Industrial and consumer electronics

Product Lifecycle

Currently in production

Replacement or upgrade options available upon request

Key Reasons to Choose This Product

High voltage and current handling capabilities

High-frequency performance for switching applications

Robust design for reliable operation

RoHS3 compliance for environmentally friendly use

Compatibility with common through-hole mounting