Manufacturer Part Number
2SA2013-TD-E
Manufacturer
onsemi
Introduction
Discrete Semiconductor Product
Bipolar Junction Transistor (BJT) Single
Product Features and Performance
ROHS3 Compliant
TO-243AA Package
Surface Mount Mounting
Operating Temperature up to 150°C (TJ)
Power Rating: 3.5W
Collector-Emitter Breakdown Voltage: 50V
Collector Current (Max): 4A
Collector Cutoff Current (Max): 1A
Collector-Emitter Saturation Voltage: 340mV @ 100mA, 2A
DC Current Gain (hFE): Min 200 @ 500mA, 2V
Transition Frequency: 400MHz
Product Advantages
High power handling capability
Wide operating voltage range
Fast switching speed
Excellent thermal performance
Key Technical Parameters
Voltage Collector Emitter Breakdown (Max): 50V
Current Collector (Ic) (Max): 4A
Current Collector Cutoff (Max): 1A
Vce Saturation (Max) @ Ib, Ic: 340mV @ 100mA, 2A
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency Transition: 400MHz
Quality and Safety Features
ROHS3 Compliant
Suitable for high-temperature applications
Compatibility
Compatible with a wide range of electronic circuits and systems
Application Areas
Power supplies
Motor drives
Switching circuits
Amplifier circuits
Product Lifecycle
Current production model
Replacements and upgrades may be available in the future
Key Reasons to Choose This Product
High power handling capability
Wide operating voltage range
Fast switching speed
Excellent thermal performance
ROHS3 compliant for environmental responsibility
Suitable for a variety of electronic applications