Manufacturer Part Number
2SA2016-TD-E
Manufacturer
onsemi
Introduction
This product is a PNP bipolar junction transistor (BJT) from onsemi, designed for a wide range of applications.
Product Features and Performance
Operating temperature up to 150°C
Power rating of 3.5 W
Collector-emitter breakdown voltage up to 50 V
Collector current up to 7 A
Collector cutoff current up to 100 nA
Collector-emitter saturation voltage of 400 mV @ 40 mA, 2 A
DC current gain (hFE) of at least 200 @ 500 mA, 2 V
Transition frequency of 330 MHz
Product Advantages
Suitable for high-power and high-frequency applications
Excellent thermal performance
Compact surface mount package
Key Technical Parameters
Package: TO-243AA
RoHS compliance: ROHS3 Compliant
Manufacturer's packaging: PCP
Supplier Device Package: PCP
Package: Tape & Reel (TR)
Quality and Safety Features
Designed and manufactured to high quality standards
RoHS3 compliance ensures environmental safety
Compatibility
Compatible with a wide range of electronic circuits and systems
Application Areas
Power supplies
Motor control
Switching circuits
Audio amplifiers
Industrial and consumer electronics
Product Lifecycle
This product is currently in production and readily available.
Replacements or upgrades may become available in the future as technology advances.
Several Key Reasons to Choose This Product
High-performance PNP transistor suitable for demanding applications
Excellent thermal capabilities for reliable operation
Compact surface mount package for efficient board space utilization
Compliance with RoHS3 standards for environmental responsibility
Readily available and supported by the manufacturer
2SA2016GUTC