Manufacturer Part Number
2N7002LT3G
Manufacturer
onsemi
Introduction
N-channel MOSFET transistor
Suitable for general-purpose switching and amplifier applications
Product Features and Performance
Drain to source voltage (Vdss) of 60 V
Maximum gate-source voltage (Vgs) of ±20 V
Low on-resistance (Rds(on)) of 7.5 Ω @ 500 mA, 10 V
Continuous drain current (Id) of 115 mA at 25°C
Input capacitance (Ciss) of 50 pF @ 25 V
Maximum power dissipation of 225 mW at 25°C ambient temperature
Product Advantages
Compact surface mount SOT-23-3 (TO-236) package
Wide operating temperature range of -55°C to 150°C
High reliability and robust design
RoHS3 compliant
Key Technical Parameters
Technology: MOSFET (Metal Oxide Semiconductor Field-Effect Transistor)
FET Type: N-Channel
Threshold voltage (Vgs(th)) of 2.5 V @ 250 μA
Drive voltage range: 5 V (max Rds(on)), 10 V (min Rds(on))
Quality and Safety Features
RoHS3 (Restriction of Hazardous Substances) compliant
Suitable for reflow soldering process
Compatibility
Widely compatible with various electronic systems and circuits
Application Areas
General-purpose switching and amplifier applications
Power management circuits
Logic level conversion
Motor control
Driving LED lights
Product Lifecycle
Current production part, no known discontinuation plans
Replacements and upgrades available from onsemi
Key Reasons to Choose This Product
Reliable and robust performance
Compact surface mount package
Wide operating temperature range
Low on-resistance for efficient power handling
RoHS3 compliance for environmentally friendly use
Availability of replacements and upgrades from the manufacturer