Manufacturer Part Number
2N7002LT1G
Manufacturer
onsemi
Introduction
Small-signal N-channel enhancement-mode field-effect transistor (FET)
Product Features and Performance
Designed for low-power switching and amplifier applications
Suitable for use in DC-DC converters, drivers, and logic circuits
Offers low on-resistance and low input capacitance
Product Advantages
Optimized for efficient power conversion
Capable of handling high voltages up to 60V
Operates over a wide temperature range (-55°C to 150°C)
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 60V
Gate-to-Source Voltage (Vgs): ±20V
On-State Resistance (Rds(on)): 7.5Ω @ 500mA, 10V
Drain Current (Id): 115mA (at 25°C)
Input Capacitance (Ciss): 50pF @ 25V
Quality and Safety Features
RoHS3 compliant
Safe operating area (SOA) protection
Compatibility
Suitable for surface mount applications
Available in SOT-23-3 (TO-236) package
Application Areas
DC-DC converters
Switch-mode power supplies
Driver circuits
Logic gates
Product Lifecycle
Current product, no plans for discontinuation
Replacements and upgrades available as technology advances
Key Reasons to Choose This Product
Efficient power conversion due to low on-resistance
Versatile voltage and temperature range
Small footprint and surface mount compatibility
Robust design with safety features
Ongoing availability and support from the manufacturer