2N7000RLRA - onsemi

Manufacturer Part Number

2N7000RLRA

Manufacturer

onsemi

Introduction

The 2N7000RLRA is a discrete N-channel MOSFET transistor.

Product Features and Performance

MOSFET (Metal Oxide Semiconductor Field Effect Transistor) technology

N-channel configuration

Drain-to-Source voltage (Vdss) up to 60V

Gate-to-Source voltage (Vgs) of ±20V

On-resistance (Rds(on)) of 5 ohms at 500mA, 10V

Continuous Drain Current (Id) of 200mA at 25°C

Input Capacitance (Ciss) of 60pF at 25V

Power Dissipation (Tc) of 350mW

Product Advantages

Compact TO-92 (TO-226) package

Wide operating temperature range of -55°C to 150°C

Suitable for low-power switching and amplifier applications

Rugged and reliable performance

Key Technical Parameters

Drain-to-Source Voltage (Vdss): 60V

Gate-to-Source Voltage (Vgs): ±20V

On-resistance (Rds(on)): 5 ohms @ 500mA, 10V

Continuous Drain Current (Id): 200mA @ 25°C

Input Capacitance (Ciss): 60pF @ 25V

Power Dissipation (Tc): 350mW

Quality and Safety Features

RoHS non-compliant

Compatibility

TO-92 (TO-226) package

Suitable for through-hole mounting

Application Areas

Low-power switching and amplifier circuits

General-purpose electronic applications

Product Lifecycle

Mature product, no discontinuation or end-of-life plans announced

Several Key Reasons to Choose This Product

Reliable MOSFET performance in a compact package

Wide operating temperature range for versatile applications

Low on-resistance for efficient power switching

Rugged construction and long-term dependability

Suitable for a variety of low-power electronic designs