2N7000BU - onsemi

Manufacturer Part Number

2N7000BU

Manufacturer

onsemi

Introduction

The 2N7000BU is a N-channel enhancement-mode field-effect transistor (MOSFET) in a TO-92-3 package, suitable for general-purpose switching and amplifying applications.

Product Features and Performance

MOSFET (Metal Oxide Semiconductor Field Effect Transistor) technology

N-Channel enhancement-mode operation

Operating temperature range: -55°C to 150°C

Drain-to-Source Voltage (Vdss): 60V

Gate-to-Source Voltage (Vgs): ±20V

On-State Resistance (Rds(on)): 5Ω @ 500mA, 10V

Continuous Drain Current (Id): 200mA @ 25°C

Input Capacitance (Ciss): 50pF @ 25V

Power Dissipation (Ptot): 400mW @ 25°C

Product Advantages

Robust and reliable performance

Suitable for a wide range of switching and amplifying applications

Small and compact TO-92-3 package

RoHS-compliant

Key Technical Parameters

Drain-to-Source Voltage (Vdss): 60V

Gate-to-Source Voltage (Vgs): ±20V

On-State Resistance (Rds(on)): 5Ω @ 500mA, 10V

Continuous Drain Current (Id): 200mA @ 25°C

Input Capacitance (Ciss): 50pF @ 25V

Power Dissipation (Ptot): 400mW @ 25°C

Quality and Safety Features

RoHS-compliant design

Robust and reliable construction

Compatibility

Compatible with various electronic circuits and systems

Application Areas

General-purpose switching and amplifying applications

Low-power analog and digital circuits

Consumer electronics

Industrial automation and control systems

Product Lifecycle

This product is an active and widely-used MOSFET device

Replacement or upgraded models may be available in the future

Key Reasons to Choose This Product

Reliable and robust performance

Suitable for a wide range of applications

Small and compact TO-92-3 package

RoHS-compliant design

Cost-effective solution for general-purpose switching and amplifying needs