2N3906RLRAG - onsemi

Manufacturer Part Number

2N3906RLRAG

Manufacturer

onsemi

Introduction

The 2N3906RLRAG is a PNP bipolar junction transistor (BJT) that is widely used in various electronic circuits and applications.

Product Features and Performance

Operates in the temperature range of -55°C to 150°C

Maximum power dissipation of 625 mW

Maximum collector-emitter breakdown voltage of 40 V

Maximum collector current of 200 mA

Low collector-emitter saturation voltage of 400 mV @ 5 mA, 50 mA

High current gain of 100 minimum @ 10 mA, 1 V

High transition frequency of 250 MHz

Product Advantages

Reliable and robust performance

Versatile applications in analog and digital circuits

Compact and easy to integrate

Key Technical Parameters

Package: TO-92 (TO-226)

Transistor Type: PNP

Operating Temperature: -55°C to 150°C

Power Dissipation: 625 mW

Collector-Emitter Breakdown Voltage: 40 V

Collector Current: 200 mA

Collector-Emitter Saturation Voltage: 400 mV

Current Gain: 100 minimum

Transition Frequency: 250 MHz

Quality and Safety Features

Designed and manufactured to strict quality standards

Robust and reliable construction

Meets relevant safety and environmental regulations

Compatibility

The 2N3906RLRAG is compatible with a wide range of electronic circuits and applications that require a PNP bipolar junction transistor.

Application Areas

Analog and digital circuits

Amplifiers

Switches

Logic gates

Power supplies

Sensors and control systems

Product Lifecycle

The 2N3906RLRAG is an established and widely used transistor with no plans for discontinuation. Replacement and upgrade options are readily available.

Key Reasons to Choose this Product

Reliable and robust performance in a wide temperature range

High current handling and switching capabilities

Compact and easy to integrate

Widely compatible with various electronic circuits and applications

Readily available and supported by the manufacturer