2N3906BU - onsemi

Manufacturer Part Number

2N3906BU

Manufacturer

onsemi

Introduction

Discrete Semiconductor Product

Bipolar Junction Transistor (BJT), PNP type

Product Features and Performance

Operates in -55°C to 150°C temperature range

Maximum power rating of 625 mW

Maximum collector-emitter breakdown voltage of 40 V

Maximum collector current of 200 mA

Low collector-emitter saturation voltage of 400 mV @ 5 mA, 50 mA

Minimum DC current gain of 100 @ 10 mA, 1 V

Transition frequency of 250 MHz

Product Advantages

Reliable and stable performance

Compact through-hole package

Suitable for a wide range of applications

Key Technical Parameters

Voltage Collector Emitter Breakdown (Max): 40 V

Current Collector (Ic) (Max): 200 mA

Vce Saturation (Max) @ Ib, Ic: 400 mV @ 5 mA, 50 mA

DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10 mA, 1 V

Frequency Transition: 250 MHz

Quality and Safety Features

RoHS3 compliant

Compatibility

TO-92-3 package

Application Areas

Suitable for a wide range of analog and switching circuits

Can be used in amplifiers, switches, and other electronic applications

Product Lifecycle

This is an established and widely available product

Replacements and upgrades are readily available

Key Reasons to Choose This Product

Reliable and stable performance across a wide temperature range

Compact through-hole package for easy integration

Suitable for a variety of analog and switching applications

Widely available and supported by the manufacturer