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IRF1010E N-Channel MOSFET: Specifications, Equivalents, and Datasheet

The IRF1010E is a type of N-Channel Enhancement MOSFET that stands out in the world of electronic components. This comprehensive overview aims to explore the intricacies of the IRF1010E, offering insights into its usage and technical specifications. Various components such as semiconductors, capacitors, resistors, and ICs are ubiquitous, each playing unique and roles. Among these, N-Channel Enhancement MOSFETs like the IRF1010E contribute to the efficiency and reliability of numerous electronic circuits. Their extensive applications span power management systems, automotive technology, and various switching operations.

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1. IRF1010E Overview

2. IRF1010E Pinout

3. IRF1010E Symbol, Footprint, and CAD Model

4. IRF1010EPBF Specifications

5. How to Implement the IRF1010E MOSFET?

6. IRF1010E Operation and Usage

7. Features of the IRF1010E MOSFET

8. Applications of IRF1010E

9. IRF1010E Packaging

10. IRF1010E Manufacturer Information

IRF1010E Overview

The IRF1010E is an N-Channel Enhancement MOSFET that excels in high-speed switching applications. Its design minimizes resistance during operation, making it a high-efficiency voltage-controlled device where the GATE voltage regulates its switching state. This streamlined operation plays a role in numerous electronic applications, ensuring low power loss and high performance.

IRF1010E Comparable Models

• IRF1010EPBF

• IRF1010EZPBF

• IRF1018EPBF

• IRF1010NPBF

• RFP70N06

• IRF1407

• IRFB4110

• IRFB4110G

• IRFB4115

• IRFB4310Z

• IRFB4310ZG

• IRFB4410

• RFP70N06

IRF1010E Pinout

IRF1010E N-Channel MOSFET Pinout

Pin Number	Pin Name	Description
1	GATE	Acts as the control terminal, modulating the flow of current between the DRAIN and SOURCE. Use in switching applications that demand precise control over timing and accuracy.
2	DRAIN	Serves as the exit point for current flowing through the MOSFET, often connected to the load. The design around the DRAIN, including cooling strategies for efficiency.
3	SOURCE	The entry point for current, typically connected to the ground or return path. Effective management is needed for the device's reliability and noise performance.

IRF1010E Symbol, Footprint, and CAD Model

IRF1010E Symbol

IRF1010E Footprint

IRF1010E 3D Model

IRF1010EPBF Specifications

The IRF1010E by Infineon Technologies features technical specifications and includes attributes like voltage ratings, current handling, and thermal characteristics. The IRF1010EPBF shares similar specifications, suitable for comparable uses in electronic circuits.

Type	Parameter
Mount	Through Hole
Current Rating	3.4 A
Number of Pins	3
Transistor Element Material	SILICON
Power Dissipation (Max)	20 W
Operating Temperature (Min)	-55°C
Operating Temperature (Max)	150°C
Part Status	Active
Configuration	SINGLE
Terminals	Axial
RDSON (On Resistance)	0.025 Ohm
Current Rating (Max)	4.2 A
Voltage - RDS(On) Test	5V
Transistor Application	SWITCHING
Polarity	N-Channel
Gain (hfe/ß) (Min) @ Ic, Vce	50 @ 2.5A, 10V
Vce Saturation (Max) @ Ib, Ic	1.6V @ 3.2A, 5V
Continuous Drain Current (Id)	3.4A
VGS(th) (Gate Threshold Voltage)	2.0-4.0V
Drain Current (Max)	4.2A
Total Gate Charge (Qg)	72 nC
Rise Time	70ns
Fall Time	62ns
Voltage - Gate Threshold (VGS)	4V
Gate to Source Voltage (Max)	20V
Drain to Source Resistance	0.02 Ohm
Nominal Voltage	40V
Width	4.19mm
Height	4.57mm
Radiation Hardened	No
Package	TO-220A
REACH SVHC	No
RoHS Compliant	Yes
Lead Free	Yes

How to Implement the IRF1010E MOSFET?

The IRF1010E excels in high-speed switching, for medium-power loads. Its notably low turn-on resistance minimizes voltage drops and curtails power loss, making it an ideal choice for precise, demanding applications. Scenarios requiring exceptional efficiency greatly benefit from this feature. Efficiency in power management systems can be observed through the optimization of energy usage by the IRF1010E. As it reduces power loss, this MOSFET facilitates lower thermal dissipation needs and enhances overall system stability. This is advantageous in environments with limited space and cooling options. Its implementation in advanced energy systems demonstrates practical applications such as dynamically balancing power loads, and enabling longer operational lifespans for battery-driven systems. Motor controllers benefit from the high-speed switching capabilities of the IRF1010E. Precise control over switching dynamics ensures smoother electric motor operations, enhancing performance and longevity. Practical implementations reveal achieving higher torque efficiency, and reducing wear and tear, thereby lowering maintenance costs.

IRF1010E Operation and Usage

IRF1010E Application Circuit

In the sample circuit, a motor acts as the load, and a control unit administers the trigger signal. The concerted efforts of resistors, voltage dividers, and the MOSFET ensure peak performance. Resistors R1 and R2 form a voltage divider that provides the necessary gate voltage. This gate voltage, influenced by the trigger voltage from the control unit (V1) and the MOSFET's gate threshold voltage (V2), demands precision for accurate system response to control signals.

Fine-tuning resistor values profoundly impacts threshold sensitivity and overall system efficiency. In industrial settings where motors demand precise control, adjusting the voltage divider prevents issues like false triggering or delayed response. When the GATE voltage exceeds the threshold, the MOSFET activates, allowing current to flow through the motor, thus engaging it. Conversely, when the control signal drops, the GATE voltage decreases, deactivating the MOSFET and stopping the motor.

The speed and efficiency of the switching process hinge on GATE voltage variations. Ensuring sharp transitions enhances the motor's performance and durability. Implementing proper shielding and filtering increases circuit reliability, particularly in fluctuating environments like automotive applications. The control unit's role is central to the functionality of the IRF1010E. It supplies the trigger voltage that sets the GATE voltage level for the MOSFET. Maintaining high control signal integrity is required, as fluctuations or noise can lead to unpredictable MOSFET behavior, impacting motor performance.

Features of the IRF1010E MOSFET

Cutting-Edge Process Technology

The IRF1010E employs sophisticated process technology, which show its impressive performance. Such technology guarantees the transistor's efficient operation across diverse conditions, which is particularly use in semiconductor applications demanding precision and reliability. This advancement enhances the MOSFET's durability and operational lifespan.

Remarkably Low On-Resistance

A defining characteristic of the IRF1010E is its exceptionally low on-resistance (Rds(on)). This feature mitigates power losses during operation, thereby boosting efficiency. It becomes especially use in power-sensitive domains like electric vehicles and renewable energy systems, where power efficiency is a priority. The decreased resistance also results in reduced heat generation, improving the thermal management of the system.

Elevated dv/dt Rating

The IRF1010E excels with a high dv/dt rating, showcasing its capacity to handle rapid voltage fluctuations adeptly. This trait is great in fast-switching scenarios, where the MOSFET must swiftly respond without performance degradation. Such high dv/dt capability is advantageous in power electronics, ensuring system stability and performance even under rapid switching conditions.

Robust 175°C Operating Temperature

The ability to operate at temperatures as high as 175°C is another standout quality of the IRF1010E. Components that maintain reliability at elevated temperatures prove beneficial in demanding environments, such as industrial machinery and automotive engines. This capability not only broadens the MOSFET’s range of applications but also enhances its operational lifespan.

Rapid Switching Capability

The IRF1010E’s rapid switching ability is a core attribute valued in numerous modern applications. Its swift switching enhances overall system efficiency and performance for applications like computer power supplies and motor control systems. Here, fast switching leads to lower energy consumption and heightened responsiveness.

Avalanche Rating

With a full avalanche rating, the IRF1010E can endure high-energy pulses without incurring damage, underpinning its robustness. This attribute is use in applications prone to unexpected voltage surges, ensuring the MOSFET’s reliability and durability. This makes it an ideal choice for a broad spectrum of power electronics applications.

Environmentally Friendly Lead-Free Design

The IRF1010E’s lead-free construction aligns with contemporary environmental standards and regulations. The absence of lead is beneficial from both ecological and health perspectives, ensuring compliance with stringent global environmental guidelines and facilitating its use across various regions.

Applications of IRF1010E

Switching Applications

The IRF1010E shines in various switching applications. Its low on-resistance and high current capability foster efficient and dependable performance. This component is needed in systems demanding quick switching to boost overall efficiency. Its aptitude for handling substantial power makes it an attractive option for high-demand settings, such as data centers and industrial machinery, where rapid response and reliability are great.

Speed Control Units

In speed control units, the IRF1010E is valued for its seamless handling of high voltages and currents. It proves ideal for controlling motors in diverse applications from automotive to precision industrial equipment. Others have reported notable improvements in motor response and efficiency, resulting in smoother, more precise speed modulation.

Lighting Systems

The IRF1010E also excels in lighting systems. It is beneficial in LED drivers where current control is great. Incorporating this MOSFET enhances energy efficiency and extends the lifespan of lighting solutions, making it a popular choice in both commercial and residential settings. This MOSFET is closely associated with modern energy-saving lighting technology.

PWM Applications

Pulse Width Modulation (PWM) applications greatly benefit from the IRF1010E’s fast switching capabilities and efficiency. Implementing these MOSFETs in systems such as power inverters and audio amplifiers ensures precise output signal control, boosting performance. This enhances system stability with consistent and reliable operation.

Relay Drivers

In relay driving applications, the IRF1010E delivers current control and isolation for effective relay operations. Its durability and dependability make it suitable for safety-serious applications, such as automotive and industrial control systems. Practical use shows that these MOSFETs enhance system durability and reduce failure rates in demanding environments.

Switch-Mode Power Supplies

Switch-mode power supplies (SMPS) benefit greatly from the use of the IRF1010E. These MOSFETs contribute to higher efficiency and reduced heat dissipation, enhancing the overall performance of power supplies. The IRF1010E’s attributes make it a main component for delivering stable and reliable power to a variety of electronic devices.

IRF1010E Packaging

IRF1010E Package

IRF1010E Manufacturer Information

Infineon Technologies, born from Siemens Semiconductors, has cemented its place as a prominent innovator in the semiconductor industry. Infineon's expansive product line includes digital, mixed-signal, and analog integrated circuits (ICs), alongside a diverse array of discrete semiconductor components. This vast array of products makes Infineon influential in various technological domains, such as automotive, industrial power control, and security applications. Infineon Technologies, continues to lead through its innovative spirit and extensive product range. Their efforts are important in advancing energy-efficient technologies, showcasing a deep understanding of market dynamics and future directions.

Datasheet PDF

Frequently Asked Questions [FAQ]

1. What is the pin configuration of IRF1010E?

The IRF1010E MOSFET pin configuration includes:

Pin 3: SOURCE (commonly connected to ground)

Pin 2: DRAIN (linked to the load component)

Pin 1: GATE (serves as the trigger for activating the MOSFET)

2. What condition to operate the IRF1010E?

Consider these specifications when operating the IRF1010E:

Maximum DRAIN-SOURCE voltage: 60V

Maximum continuous DRAIN current: 84A

Maximum pulsed DRAIN current: 330A

Maximum GATE-SOURCE voltage: 20V

Operating temperature range: up to 175°C

Maximum power dissipation: 200W

Please refer to the English Version as our Official Version.

IRF1010E N-Channel MOSFET: Specifications, Equivalents, and Datasheet

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