Manufacturer Part Number
W971GG6SB25I
Manufacturer
Winbond Electronics Corporation
Introduction
High-performance, low-power SDRAM (DDR2) memory device with 1Gbit density.
Product Features and Performance
1Gbit memory capacity
DDR2 SDRAM technology
Parallel memory interface
200MHz clock frequency
Fast access time of 400ps
Low voltage operation from 1.7V to 1.9V
Wide operating temperature range of -40°C to 95°C
Product Advantages
High-density memory solution
Low power consumption
Reliable performance across temperature extremes
Seamless compatibility with DDR2 systems
Key Technical Parameters
Memory Size: 1Gbit
Memory Type: Volatile DRAM
Memory Interface: Parallel
Clock Frequency: 200MHz
Access Time: 400ps
Write Cycle Time: 15ns
Supply Voltage: 1.7V to 1.9V
Operating Temperature: -40°C to 95°C
Quality and Safety Features
RoHS3 compliant
84-WBGA (8x12.5) package
Compatibility
Compatible with DDR2 SDRAM systems
Application Areas
Embedded systems
Industrial automation
Networking equipment
Consumer electronics
Product Lifecycle
This product is still in active production and availability. Replacements or upgrades may become available in the future as technology evolves.
Key Reasons to Choose This Product
High-density 1Gbit memory capacity
Low power consumption
Wide operating temperature range
Reliable DDR2 SDRAM performance
Seamless compatibility with DDR2 systems
RoHS3 compliance for environmental responsibility
W971GG6NB25IWINBOND