Manufacturer Part Number
SUP85N10-10-E3
Manufacturer
Vishay / Siliconix
Introduction
N-channel enhancement-mode power MOSFET
Product Features and Performance
High drain-source breakdown voltage of 100V
Low on-resistance of 10.5mΩ
High continuous drain current of 85A
Wide operating temperature range of -55°C to 175°C
Low gate charge of 160nC
Fast switching speed
Product Advantages
Excellent power handling capability
Efficient power conversion
Reliable performance across wide temperature range
Compact and easy to integrate
Key Technical Parameters
Drain-Source Voltage (VDS): 100V
Gate-Source Voltage (VGS): ±20V
On-Resistance (RDS(on)): 10.5mΩ
Continuous Drain Current (ID): 85A
Input Capacitance (Ciss): 6550pF
Power Dissipation: 3.75W (Ta), 250W (Tc)
Gate Charge (Qg): 160nC
Quality and Safety Features
RoHS3 compliant
TO-220AB package for reliable mounting and heat dissipation
Compatibility
Suitable for a wide range of power conversion and control applications
Application Areas
Switch-mode power supplies
Motor drives
Power amplifiers
Lighting ballasts
Industrial automation
Product Lifecycle
Currently in production, no plans for discontinuation. Replacements and upgrades available.
Key Reasons to Choose
Excellent power handling and efficiency
Reliable performance across wide temperature range
Fast switching speed for high-frequency applications
RoHS3 compliance for environmental responsibility
Readily available and well-supported product
SUP85N15-95Electro-Films (EFI) / Vishay