Manufacturer Part Number
SUM80090E-GE3
Manufacturer
Vishay / Siliconix
Introduction
High-performance N-channel enhancement-mode power MOSFET
Product Features and Performance
Designed for high-frequency, high-power switch-mode power supply and motor control applications
Optimized for low on-resistance and fast switching
Low gate charge for energy-efficient operation
High power density and efficiency
Product Advantages
Exceptional performance in power conversion applications
Efficient power switching
High power density
Key Technical Parameters
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20 V
Rds On (Max) @ Id, Vgs: 9 mOhm @ 30 A, 10 V
Current Continuous Drain (Id) @ 25°C: 128 A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3425 pF @ 75 V
Power Dissipation (Max): 375 W (Tc)
Vgs(th) (Max) @ Id: 5 V @ 250 A
Drive Voltage (Max Rds On, Min Rds On): 7.5 V, 10 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Quality and Safety Features
RoHS3 compliant
Designed for high reliability and long lifespan
Compatibility
Surface mount package (DPAK/TO-263)
Application Areas
High-frequency, high-power switch-mode power supply
Motor control applications
Product Lifecycle
Current product, no indication of discontinuation
Replacements and upgrades may be available in the future
Key Reasons to Choose This Product
Exceptional performance in power conversion applications
Efficient power switching with low on-resistance and fast switching
High power density and efficiency
Reliable and long-lasting design