Manufacturer Part Number
SUM55P06-19L-E3
Manufacturer
Vishay / Siliconix
Introduction
This is a P-channel MOSFET transistor from Vishay/Siliconix, part of the TrenchFET series.
Product Features and Performance
60V Drain to Source Voltage (Vdss)
±20V Gate to Source Voltage (Vgs)
19mOhm On-Resistance (Rds(on)) at 30A, 10V
55A Continuous Drain Current (Id) at 25°C case temperature
3500pF Input Capacitance (Ciss) at 25V
115nC Gate Charge (Qg) at 10V
Operating temperature range of -55°C to 175°C
Product Advantages
Low on-resistance for efficient power switching
High current capability
Compact TO-263 (DPak) surface mount package
Key Technical Parameters
MOSFET technology
P-channel FET type
3V Gate Threshold Voltage (Vgs(th)) at 250A
5V to 10V Drive Voltage range
Quality and Safety Features
RoHS3 compliant
Housed in the reliable TO-263 (DPak) package
Compatibility
Compatible with various power supply, motor control, and switching applications
Application Areas
Power conversion and control
Motor drives
Switch-mode power supplies
Industrial and consumer electronics
Product Lifecycle
This product is currently in production and not nearing discontinuation.
Replacements and upgrades may be available from Vishay/Siliconix.
Key Reasons to Choose This Product
Excellent performance characteristics, including low on-resistance and high current capability
Efficient and reliable power switching in a compact surface mount package
Wide operating temperature range to suit diverse application requirements
RoHS3 compliance for use in environmentally-conscious designs
SUM60N04-05L MOSElectro-Films (EFI) / Vishay