Manufacturer Part Number
SUD50P04-13L-GE3
Manufacturer
Vishay / Siliconix
Introduction
Discrete Semiconductor Product
Single Transistor FET, MOSFET
Product Features and Performance
ROHS3 Compliant
TO-252-3, DPak (2 Leads + Tab), SC-63 Package
TrenchFET Series
P-Channel MOSFET
Operating Temperature: -55°C to 175°C (TJ)
Drain to Source Voltage (Vdss): 40V
Gate-Source Voltage (Vgs) (Max): ±20V
On-State Resistance (Rds(on)) (Max): 13mOhm @ 30A, 10V
Continuous Drain Current (Id) (Max): 60A (Tc)
Input Capacitance (Ciss) (Max): 3120pF @ 25V
Power Dissipation (Max): 3W (Ta), 93.7W (Tc)
Threshold Voltage (Vgs(th)) (Max): 3V @ 250A
Drive Voltage (Min Rds(on), Max Rds(on)): 4.5V, 10V
Gate Charge (Qg) (Max): 95nC @ 10V
Product Advantages
Low on-state resistance
High current handling capability
Wide operating temperature range
Surface mount package
Key Technical Parameters
MOSFET Technology
P-Channel FET Type
TO-252AA Package
Tape & Reel (TR) Packaging
Quality and Safety Features
ROHS3 Compliant
Compatibility
Suitable for a variety of power electronics and control applications
Application Areas
Power supplies
Motor drives
Switching circuits
Industrial controls
Product Lifecycle
Currently available
Replacements or upgrades may be available in the future
Key Reasons to Choose This Product
High current capability
Low on-state resistance
Wide operating temperature range
Compact surface mount package
Suitable for various power electronics applications