Manufacturer Part Number
SUD45P03-09-GE3
Manufacturer
Vishay / Siliconix
Introduction
Discrete Semiconductor Product
Single Transistor FET, MOSFET
Product Features and Performance
P-Channel MOSFET
Trench FET technology
Low on-resistance (Rds(on))
High current capability (45A continuous drain current)
Low input capacitance (2700pF)
Wide operating temperature range (-55°C to 150°C)
Product Advantages
Excellent power efficiency
High power density
Reliable performance
Suitable for high-current applications
Key Technical Parameters
Drain-Source Voltage (Vdss): 30V
Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 8.7mΩ @ 20A, 10V
Continuous Drain Current (Id): 45A (at 25°C)
Input Capacitance (Ciss): 2700pF @ 15V
Power Dissipation: 2.1W (at Ta), 41.7W (at Tc)
Quality and Safety Features
RoHS3 compliant
Trench FET technology for improved performance and reliability
Compatibility
TO-252-3, DPak (2 Leads + Tab), SC-63 package
Surface mount (SMD) mounting
Application Areas
Switch-mode power supplies
Motor drives
Voltage regulators
Automotive electronics
Industrial control systems
Product Lifecycle
Current production, no discontinuation plans
Replacements and upgrades available from Vishay/Siliconix
Key Reasons to Choose This Product
Excellent power efficiency and high power density
High current capability and low on-resistance
Wide operating temperature range for reliable performance
Trench FET technology for improved quality and safety
Compatibility with common surface mount packages