Manufacturer Part Number
SUD40N10-25-E3
Manufacturer
Vishay / Siliconix
Introduction
N-Channel MOSFET Transistor
Product Features and Performance
100V Drain-Source Voltage
40A Continuous Drain Current
25mΩ Maximum On-Resistance
-55°C to 175°C Operating Temperature Range
2400pF Maximum Input Capacitance
60nC Maximum Gate Charge
3W Maximum Power Dissipation (Ta), 136W Maximum Power Dissipation (Tc)
Product Advantages
Efficient power switching
Reliable high-power operation
Wide operating temperature range
Suitable for various power electronics applications
Key Technical Parameters
Drain-Source Voltage (Vdss): 100V
Maximum Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 25mΩ @ 40A, 10V
Continuous Drain Current (Id): 40A (Tc)
Threshold Voltage (Vgs(th)): 3V @ 250A
Input Capacitance (Ciss): 2400pF @ 25V
Gate Charge (Qg): 60nC @ 10V
Quality and Safety Features
RoHS3 compliant
Suitable for industrial and consumer applications
Compatibility
TO-252-3, DPak (2 Leads + Tab), SC-63 package
Surface mount technology
Application Areas
Power supplies
Motor drives
Inverters
Switching power amplifiers
Battery chargers
General power electronics applications
Product Lifecycle
Current production, no discontinuation planned
Replacements and upgrades available from Vishay/Siliconix
Key Reasons to Choose This Product
High power handling capability
Low on-resistance for efficient power switching
Wide operating temperature range
Reliable and robust performance
RoHS compliance for environmental sustainability
Compatibility with standard surface mount packaging
