Manufacturer Part Number
SQS850EN-T1_GE3
Manufacturer
Vishay / Siliconix
Introduction
N-Channel MOSFET Transistor
Product Features and Performance
High current handling capability up to 12A
Low on-resistance of 21.5 milliohms
Wide operating temperature range of -55°C to 175°C
Low input capacitance of 2021 pF
High power dissipation of 33 watts
Product Advantages
Efficient power management
Reliable performance in harsh environments
Compact and space-saving design
Key Technical Parameters
Drain to Source Voltage (Vdss): 60V
Gate to Source Voltage (Vgs) Max: ±20V
Threshold Voltage (Vgs(th)) Max: 2.5V
On-Resistance (Rds(on)) Max: 21.5 milliohms
Continuous Drain Current (Id) at 25°C: 12A
Input Capacitance (Ciss) Max: 2021 pF
Power Dissipation (Tc) Max: 33W
Quality and Safety Features
Robust and reliable design
Compliant with safety and environmental standards
Compatibility
Suitable for a wide range of electronic applications
Application Areas
Power management circuits
Motor control
Industrial and consumer electronics
Product Lifecycle
Currently available
No information on discontinuation or replacement
Several Key Reasons to Choose This Product
High current handling and low on-resistance for efficient power management
Wide operating temperature range and high power dissipation for reliable performance in harsh environments
Compact and space-saving design
Robust and reliable construction for long-lasting performance
SQS482EN-T1-BE3Electro-Films (EFI) / Vishay