Manufacturer Part Number
SQM10250E_GE3
Manufacturer
Vishay / Siliconix
Introduction
High-performance N-channel TrenchFET power MOSFET suitable for automotive and industrial applications.
Product Features and Performance
Automotive-qualified to AEC-Q101 standard
Very low on-resistance for high efficiency
Fast switching speed
Extremely low gate charge for high-frequency operation
High power density with low thermal resistance
Withstands high drain-to-source voltage up to 250V
Product Advantages
Excellent thermal management
High reliability and ruggedness
Optimized for efficient power conversion
Suitable for high-frequency switch-mode power supplies
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 250V
Maximum Gate-to-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 30mΩ @ 15A, 10V
Continuous Drain Current (Id): 65A @ 25°C
Input Capacitance (Ciss): 4050pF @ 25V
Power Dissipation (Pd): 375W @ Tc
Quality and Safety Features
RoHS3 compliant
AEC-Q101 qualified for automotive applications
Compatibility
Designed for use in automotive, industrial and consumer electronics applications
Application Areas
Switch-mode power supplies
Motor drives
Inverters
Power factor correction circuits
Lighting ballasts
Product Lifecycle
This product is currently available and not nearing discontinuation.
Replacements and upgrades may be available from Vishay/Siliconix.
Several Key Reasons to Choose This Product
Excellent thermal performance and power density
High reliability and ruggedness for demanding applications
Optimized for efficient high-frequency power conversion
Automotive-qualified for use in vehicular systems
Wide availability and ongoing product support from Vishay/Siliconix
SQM110P06-07L-GE3Electro-Films (EFI) / Vishay