Manufacturer Part Number
SQJ912DEP-T1_GE3
Manufacturer
Vishay / Siliconix
Introduction
The SQJ912DEP-T1_GE3 is a dual N-Channel MOSFET from Vishay's TrenchFET series, designed for use in automotive and other high-reliability applications.
Product Features and Performance
Optimized for high-efficiency power conversion and switching
Low on-resistance for improved energy efficiency
High current capability up to 30A
Wide operating temperature range of -55°C to 175°C
Compliant with AEC-Q101 automotive qualification standards
Product Advantages
Improved thermal management due to PowerPAK SO-8 Dual package
Reliable performance in demanding automotive and industrial applications
Optimized for high-frequency, high-efficiency power conversion
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 40V
On-Resistance (Rds(on)): 7.3mΩ @ 7A, 10V
Continuous Drain Current (Id): 30A @ 25°C
Threshold Voltage (Vgs(th)): 2.5V @ 250A
Gate Charge (Qg): 36nC @ 10V
Quality and Safety Features
RoHS3 compliant
AEC-Q101 qualified for automotive applications
Compatibility
Suitable for use in a wide range of power conversion, switching, and control applications
Application Areas
Automotive electronics
Industrial power supplies and motor drives
Telecom and server power systems
Renewable energy systems
Product Lifecycle
This product is currently in active production and is not nearing discontinuation.
Replacement or upgraded products may be available in the future as technology advances.
Key Reasons to Choose This Product
Excellent efficiency and power density due to low on-resistance and high current capability
Reliable performance in harsh automotive and industrial environments
Compact and thermally-efficient PowerPAK SO-8 Dual package
Automotive-grade AEC-Q101 qualification for mission-critical applications
Optimized for high-frequency, high-efficiency power conversion and switching
SQJ886EP-TI-HE3Electro-Films (EFI) / Vishay