Manufacturer Part Number
SQJ850EP-T1_GE3
Manufacturer
Vishay / Siliconix
Introduction
High-performance N-channel MOSFET with low RDS(on) and high current handling capability in a compact PowerPAK SO-8 package.
Product Features and Performance
AEC-Q101 qualified for automotive applications
Ultra-low on-resistance of 23 mΩ @ 10.3 A, 10 V
High current capability of 24 A continuous at 25°C
Wide operating temperature range of -55°C to 175°C
Compact PowerPAK SO-8 package for efficient heat dissipation
Product Advantages
Excellent thermal performance
High power density
Robust and reliable design
Suitable for a wide range of automotive and industrial applications
Key Technical Parameters
Drain to Source Voltage (VDS): 60 V
Gate to Source Voltage (VGS): ±20 V
Continuous Drain Current (ID): 24 A at 25°C
On-Resistance (RDS(on)): 23 mΩ at 10.3 A, 10 V
Input Capacitance (Ciss): 1225 pF at 30 V
Power Dissipation (PD): 45 W at 25°C
Quality and Safety Features
RoHS3 compliant
AEC-Q101 qualified for automotive applications
Compatibility
Compatible with a wide range of automotive and industrial applications
Application Areas
Automotive electronics
Industrial power supplies
Motor drives
Switching power supplies
Inverters and converters
Product Lifecycle
This product is currently in active production and is not nearing discontinuation.
Replacement or upgrade options may be available from Vishay/Siliconix.
Key Reasons to Choose This Product
Excellent thermal performance and high current capability
Compact and efficient PowerPAK SO-8 package
Robust and reliable design for automotive and industrial applications
Proven performance and quality through AEC-Q101 qualification
Wide operating temperature range and RoHS3 compliance