Manufacturer Part Number
SQJ479EP-T1_BE3
Manufacturer
Vishay / Siliconix
Introduction
High-performance P-channel enhancement-mode power MOSFET suitable for power management and switching applications.
Product Features and Performance
High-power, low on-resistance MOSFET
Optimized for high-efficiency power conversion
Low gate charge for high-speed switching
Rugged avalanche rated
Excellent thermal characteristics
Product Advantages
Efficient power conversion
High-speed switching
Reliable operation in high-temperature environments
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 80V
Gate-to-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 33mΩ @ 10A, 10V
Continuous Drain Current (Id): 32A @ 25°C
Input Capacitance (Ciss): 4500pF @ 25V
Power Dissipation (Pd): 68W @ 25°C
Quality and Safety Features
Reliable MOSFET technology
Compliant with relevant safety standards
Compatibility
Compatible with a wide range of power management and switching applications.
Application Areas
Power supplies
Motor drives
Automotive electronics
Industrial controls
Telecommunications equipment
Product Lifecycle
This product is currently in active production and is not nearing discontinuation. Replacement or upgraded models may become available in the future.
Key Reasons to Choose This Product
Efficient power conversion with low on-resistance
High-speed switching capabilities
Reliable operation in high-temperature environments
Optimized for power management and switching applications
Compliance with relevant safety standards
SQJ474EP-T1_GE3Vishay