Manufacturer Part Number
SQJ416EP-T1_GE3
Manufacturer
Vishay / Siliconix
Introduction
High-performance, automotive-grade N-channel power MOSFET in a compact PowerPAK SO-8 package
Product Features and Performance
Optimized for high-efficiency, high-power density switching applications
Low on-resistance down to 30 mΩ
High continuous drain current up to 27 A
Wide operating temperature range of -55°C to 175°C
Low gate charge and input capacitance for fast switching
Automotive-qualified to AEC-Q101 standard
Product Advantages
Excellent thermal management due to PowerPAK package
Robust design for reliable operation in demanding automotive applications
Optimized switching performance for high-efficiency power conversion
Key Technical Parameters
Drain-Source Voltage (VDS): 100 V
Gate-Source Voltage (VGS): ±20 V
On-Resistance (RDS(on)): 30 mΩ @ 10 A, 10 V
Drain Current (ID): 27 A @ 25°C
Input Capacitance (Ciss): 800 pF @ 25 V
Power Dissipation (PD): 45 W @ 25°C
Quality and Safety Features
RoHS3 compliant
Automotive-qualified to AEC-Q101 standard
Compatibility
Suitable for a wide range of automotive, industrial, and consumer electronics applications requiring high-efficiency, high-power switching
Application Areas
Automotive electronics (e.g., motor drives, power converters)
Industrial power supplies and motor drives
Consumer electronics (e.g., LED lighting, power tools)
Product Lifecycle
This product is currently in active production and is not nearing discontinuation. Vishay offers a wide range of replacement and upgrade options within their TrenchFET product portfolio.
Key Reasons to Choose This Product
Excellent thermal management and reliability for demanding automotive applications
High efficiency and power density for compact, high-performance power conversion
Robust design and automotive-grade qualification for long-term, reliable operation
Optimized switching performance for fast, efficient power conversion
Wide operating temperature range and compatibility with various applications
SQJ409EP-T1-GE3Vishay