Manufacturer Part Number
SQD50P06-15L_GE3
Manufacturer
Vishay / Siliconix
Introduction
Discrete Semiconductor Product - Transistors - FETs, MOSFETs - Single
Product Features and Performance
P-Channel MOSFET
60V Drain-Source Voltage
±20V Gate-Source Voltage
5mΩ On-Resistance @ 17A, 10V
50A Continuous Drain Current @ 25°C
5910pF Input Capacitance @ 25V
136W Power Dissipation (Tc)
5V Gate Threshold Voltage @ 250μA
150nC Gate Charge @ 10V
Product Advantages
High current capability
Low on-resistance
Suitable for high power applications
Key Technical Parameters
Drain-Source Voltage: 60V
Gate-Source Voltage: ±20V
On-Resistance: 15.5mΩ
Drain Current: 50A
Input Capacitance: 5910pF
Power Dissipation: 136W
Quality and Safety Features
RoHS3 Compliant
TO-252AA Packaging
Compatibility
Surface mount package
Application Areas
Power supplies
Motor drivers
Automotive electronics
Industrial automation
Product Lifecycle
Currently available, no known plans for discontinuation. Replacement or upgrade options may be available from the manufacturer.
Key Reasons to Choose This Product
High current and power handling capabilities
Low on-resistance for efficient power conversion
Suitable for a wide range of high-power applications
Proven reliability and performance from Vishay/Siliconix