SQD25N15-52_GE3 - Vishay Siliconix

Manufacturer Part Number

SQD25N15-52_GE3

Manufacturer

Vishay / Siliconix

Introduction

Discrete Semiconductor Product

Transistors FETs, MOSFETs Single

Product Features and Performance

Automotive, AEC-Q101, TrenchFET series

N-Channel MOSFET

Drain to Source Voltage (Vdss): 150 V

Vgs (Max): ±20 V

Rds On (Max) @ Id, Vgs: 52 mOhm @ 15 A, 10 V

Current Continuous Drain (Id) @ 25°C: 25 A (Tc)

Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V

Power Dissipation (Max): 107 W (Tc)

Vgs(th) (Max) @ Id: 4 V @ 250 A

Drive Voltage (Max Rds On, Min Rds On): 10 V

Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V

Product Advantages

Automotive and AEC-Q101 qualified

Low on-resistance

High power handling capability

Suitable for high-power switching applications

Key Technical Parameters

Drain to Source Voltage (Vdss): 150 V

Vgs (Max): ±20 V

Rds On (Max) @ Id, Vgs: 52 mOhm @ 15 A, 10 V

Current Continuous Drain (Id) @ 25°C: 25 A (Tc)

Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V

Power Dissipation (Max): 107 W (Tc)

Quality and Safety Features

ROHS3 Compliant

Meets automotive and AEC-Q101 standards

Compatibility

Surface Mount

TO-252-3, DPak (2 Leads + Tab), SC-63 package

Application Areas

High-power switching applications

Automotive electronics

Industrial power control

Product Lifecycle

Currently available

No discontinuation information found

Key Reasons to Choose This Product

Automotive and AEC-Q101 qualified for reliability

Low on-resistance for high efficiency

High power handling capability

Suitable for high-power switching applications

Surface mount package for easy integration