Manufacturer Part Number
SQD25N15-52_GE3
Manufacturer
Vishay / Siliconix
Introduction
Discrete Semiconductor Product
Transistors FETs, MOSFETs Single
Product Features and Performance
Automotive, AEC-Q101, TrenchFET series
N-Channel MOSFET
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20 V
Rds On (Max) @ Id, Vgs: 52 mOhm @ 15 A, 10 V
Current Continuous Drain (Id) @ 25°C: 25 A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
Power Dissipation (Max): 107 W (Tc)
Vgs(th) (Max) @ Id: 4 V @ 250 A
Drive Voltage (Max Rds On, Min Rds On): 10 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Product Advantages
Automotive and AEC-Q101 qualified
Low on-resistance
High power handling capability
Suitable for high-power switching applications
Key Technical Parameters
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20 V
Rds On (Max) @ Id, Vgs: 52 mOhm @ 15 A, 10 V
Current Continuous Drain (Id) @ 25°C: 25 A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
Power Dissipation (Max): 107 W (Tc)
Quality and Safety Features
ROHS3 Compliant
Meets automotive and AEC-Q101 standards
Compatibility
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63 package
Application Areas
High-power switching applications
Automotive electronics
Industrial power control
Product Lifecycle
Currently available
No discontinuation information found
Key Reasons to Choose This Product
Automotive and AEC-Q101 qualified for reliability
Low on-resistance for high efficiency
High power handling capability
Suitable for high-power switching applications
Surface mount package for easy integration
SQD2011KSanken Electric Co., Ltd.