Manufacturer Part Number
SQ3456BEV-T1_GE3
Manufacturer
Vishay / Siliconix
Introduction
High-performance N-channel enhancement-mode power MOSFET for use in power management and control applications.
Product Features and Performance
Designed for high-efficiency, high-speed switching applications
Extremely low on-resistance for low conduction losses
Very fast switching speeds for high-frequency operation
Low gate charge and gate-source charge for efficient driver design
30V drain-source voltage rating
Continuous drain current of 7.8A at 25°C
Product Advantages
Excellent thermal performance
Robust and reliable design
Optimized for high-efficiency power conversion
Suitable for a wide range of power management applications
Key Technical Parameters
Drain-Source Voltage (Vdss): 30V
Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 35mΩ @ 6A, 10V
Drain Current (Id): 7.8A (Tc)
Input Capacitance (Ciss): 370pF @ 15V
Power Dissipation (Ptot): 4W (Tc)
Quality and Safety Features
RoHS3 compliant
Designed for reliable and safe operation
Compatibility
Compatible with standard MOSFET drivers and control circuits
Application Areas
Power management and control systems
Switching power supplies
Motor drives
Automotive electronics
Industrial and consumer electronics
Product Lifecycle
Currently in production
Replacement and upgrade options available
Key Reasons to Choose This Product
Excellent efficiency and thermal performance
Reliable and robust design
Optimized for high-frequency, high-efficiency power conversion
Suitable for a wide range of power management applications
Availability of replacement and upgrade options