SQ1912AEEH-T1_GE3 - Vishay Siliconix

Manufacturer Part Number

SQ1912AEEH-T1_GE3

Manufacturer

Vishay / Siliconix

Introduction

Discrete Semiconductor Product

Transistors FETs, MOSFETs Arrays

Product Features and Performance

Automotive, AEC-Q101, TrenchFET Series

2 N-Channel (Dual) Configuration

Drain to Source Voltage (Vdss): 20V

Rds On (Max) @ Id, Vgs: 280mOhm @ 1.2A, 4.5V

MOSFET (Metal Oxide) Technology

Current Continuous Drain (Id) @ 25°C: 800mA (Tc)

Input Capacitance (Ciss) (Max) @ Vds: 27pF @ 10V

Vgs(th) (Max) @ Id: 1.5V @ 250A

Gate Charge (Qg) (Max) @ Vgs: 1.25nC @ 4.5V

Product Advantages

Automotive-grade with AEC-Q101 qualification

High performance TrenchFET technology

Low on-resistance and input capacitance

Key Technical Parameters

Manufacturer's packaging: SC-70-6

Package / Case: 6-TSSOP, SC-88, SOT-363

Supplier Device Package: SC-70-6

Package: Tape & Reel (TR)

Operating Temperature: -55°C ~ 175°C (TJ)

Power Max: 1.5W

Quality and Safety Features

Automotive-grade quality and reliability

Compatibility

Surface Mount Mounting Type

Application Areas

Automotive and industrial applications requiring high-performance, low on-resistance MOSFETs

Product Lifecycle

Active product, no indications of discontinuation

Replacement and upgrade options available from Vishay

Key Reasons to Choose This Product

Automotive-grade quality and reliability

High performance TrenchFET technology

Low on-resistance and input capacitance

Wide operating temperature range

Suitable for a variety of automotive and industrial applications