Manufacturer Part Number
SIS780DN-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
High-performance N-channel power MOSFET
Product Features and Performance
Optimized for high-frequency, high-efficiency switching applications
Exceptionally low on-resistance for low conduction losses
Extremely fast switching for high-frequency operation
Robust, reliable design with Schottky diode
Suitable for various power conversion and control applications
Product Advantages
Excellent electrical performance
Compact and efficient package
Reliable and robust design
Key Technical Parameters
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20 V
Rds On (Max) @ Id, Vgs: 13.5 mOhm @ 15 A, 10 V
Continuous Drain Current (Id) @ 25°C: 18 A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 722 pF @ 15 V
Power Dissipation (Max): 27.7 W (Tc)
Vgs(th) (Max) @ Id: 2.3 V @ 250 A
Drive Voltage (Max Rds On, Min Rds On): 4.5 V, 10 V
Gate Charge (Qg) (Max) @ Vgs: 24.5 nC @ 10 V
Quality and Safety Features
Robust, reliable design with Schottky diode
Meets stringent quality and safety standards
Compatibility
Suitable for various power conversion and control applications
Application Areas
High-frequency, high-efficiency switching applications
Power conversion and control applications
Product Lifecycle
Currently available
Replacements and upgrades may be available in the future
Several Key Reasons to Choose This Product
Excellent electrical performance with extremely low on-resistance and fast switching
Compact and efficient package design
Reliable and robust construction with Schottky diode
Suitable for a wide range of power conversion and control applications