Manufacturer Part Number
SIS110DN-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
High-performance N-channel TrenchFET Gen IV power MOSFET in a PowerPAK 1212-8 package.
Product Features and Performance
100V drain-to-source voltage
Low on-resistance of 54mOhm @ 4A, 10V
2A continuous drain current at 25°C ambient
2A continuous drain current at 25°C case
Low input capacitance of 550pF @ 50V
2W power dissipation at 25°C ambient
24W power dissipation at 25°C case
Product Advantages
Improved power density and efficiency
Optimized for high-frequency, high-efficiency switching applications
Suitable for high-power density power supplies, DC/DC converters, and motor drives
Key Technical Parameters
Vdss: 100V
Vgs (Max): ±20V
Rds On (Max) @ Id, Vgs: 54mOhm @ 4A, 10V
Ciss (Max) @ Vds: 550pF @ 50V
Id (Continuous) @ 25°C: 5.2A (Ta), 14.2A (Tc)
Pd (Max): 3.2W (Ta), 24W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250A
Qg (Max) @ Vgs: 13nC @ 10V
Quality and Safety Features
RoHS3 compliant
Suitable for high-reliability applications
Compatibility
Compatible with other TrenchFET Gen IV devices in the SIS110 series
Application Areas
High-frequency, high-efficiency switching applications
Power supplies, DC/DC converters, motor drives
Industrial, consumer, and automotive electronics
Product Lifecycle
Current production product
Replacements and upgrades available within the SIS110 series
Key Reasons to Choose This Product
Excellent performance in terms of low on-resistance, high current capability, and low input capacitance
Optimized for high-frequency, high-efficiency switching applications
Compact and thermally efficient PowerPAK 1212-8 package
Suitable for high-reliability applications due to RoHS3 compliance
Part of the proven and widely used SIS110 series
