Manufacturer Part Number
SIR426DP-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
Discrete Semiconductor Product
Single Transistor FET, MOSFET
Product Features and Performance
N-Channel MOSFET
40V Drain-Source Voltage
30A Continuous Drain Current
5mΩ On-Resistance
1160pF Input Capacitance
31nC Gate Charge
-55°C to 150°C Operating Temperature Range
Surface Mount Package
Product Advantages
High Power Handling Capability
Low On-Resistance
Wide Operating Temperature Range
Compact Surface Mount Package
Key Technical Parameters
Drain-Source Voltage (Vdss): 40V
Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 10.5mΩ
Continuous Drain Current (Id): 30A
Input Capacitance (Ciss): 1160pF
Power Dissipation: 4.8W (Ta), 41.7W (Tc)
Gate Charge (Qg): 31nC
Quality and Safety Features
RoHS3 Compliant
Vishay / Siliconix Quality and Reliability
Compatibility
Compatible with various electronic circuits and applications requiring high-power, low on-resistance N-Channel MOSFETs
Application Areas
Power Supplies
Motor Drives
Inverters
Switching Regulators
General Power Management
Product Lifecycle
Current product, no discontinuation plans
Replacement and upgrade options available from Vishay / Siliconix
Key Reasons to Choose This Product
Excellent power handling and efficiency due to low on-resistance
Wide operating temperature range suitable for diverse applications
Compact surface mount package for space-constrained designs
Proven quality and reliability from Vishay / Siliconix
Availability of replacement and upgrade options