Manufacturer Part Number
SIJ186DP-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
This product is a discrete semiconductor device, specifically a single N-channel MOSFET transistor.
Product Features and Performance
Trench MOSFET technology (TrenchFET Gen IV)
Low on-resistance of 4.5 mOhm at 15A, 10V
High continuous drain current of 23A at 25°C ambient, 79.4A at 25°C case temperature
Wide operating temperature range of -55°C to 150°C
Low input capacitance of 1710 pF at 30V
Maximum power dissipation of 5W at 25°C ambient, 57W at 25°C case temperature
Product Advantages
Excellent efficiency and low power loss
High current handling capability
Suitable for a wide range of temperature conditions
Small package size (PowerPAK SO-8)
Key Technical Parameters
Drain-Source Voltage (Vdss): 60V
Gate-Source Voltage (Vgs): ±20V
Threshold Voltage (Vgs(th)): 3.6V at 250A
Drive Voltage: 6V (max Rds on), 10V (min Rds on)
Gate Charge (Qg): 37 nC at 10V
Quality and Safety Features
RoHS3 compliant
Suitable for surface mount assembly
Compatibility
Can be used in various power electronics applications, such as motor drives, power supplies, and switched-mode power converters.
Application Areas
Power management
Motor control
Switched-mode power supplies
Industrial automation
Consumer electronics
Product Lifecycle
This product is an active, current offering from Vishay / Siliconix. There are no indications of it being near discontinuation, and replacement or upgrade options are available.
Several Key Reasons to Choose This Product
High efficiency and low power loss due to the advanced TrenchFET Gen IV technology.
Excellent current handling capability, enabling the use in high-power applications.
Wide operating temperature range, making it suitable for a variety of environmental conditions.
Small package size (PowerPAK SO-8) for space-constrained designs.
RoHS3 compliance, ensuring environmental friendliness.
SIJA54DP-T1-GE3Vishay