SIJ186DP-T1-GE3 - Vishay Siliconix

Manufacturer Part Number

SIJ186DP-T1-GE3

Manufacturer

Vishay / Siliconix

Introduction

This product is a discrete semiconductor device, specifically a single N-channel MOSFET transistor.

Product Features and Performance

Trench MOSFET technology (TrenchFET Gen IV)

Low on-resistance of 4.5 mOhm at 15A, 10V

High continuous drain current of 23A at 25°C ambient, 79.4A at 25°C case temperature

Wide operating temperature range of -55°C to 150°C

Low input capacitance of 1710 pF at 30V

Maximum power dissipation of 5W at 25°C ambient, 57W at 25°C case temperature

Product Advantages

Excellent efficiency and low power loss

High current handling capability

Suitable for a wide range of temperature conditions

Small package size (PowerPAK SO-8)

Key Technical Parameters

Drain-Source Voltage (Vdss): 60V

Gate-Source Voltage (Vgs): ±20V

Threshold Voltage (Vgs(th)): 3.6V at 250A

Drive Voltage: 6V (max Rds on), 10V (min Rds on)

Gate Charge (Qg): 37 nC at 10V

Quality and Safety Features

RoHS3 compliant

Suitable for surface mount assembly

Compatibility

Can be used in various power electronics applications, such as motor drives, power supplies, and switched-mode power converters.

Application Areas

Power management

Motor control

Switched-mode power supplies

Industrial automation

Consumer electronics

Product Lifecycle

This product is an active, current offering from Vishay / Siliconix. There are no indications of it being near discontinuation, and replacement or upgrade options are available.

Several Key Reasons to Choose This Product

High efficiency and low power loss due to the advanced TrenchFET Gen IV technology.

Excellent current handling capability, enabling the use in high-power applications.

Wide operating temperature range, making it suitable for a variety of environmental conditions.

Small package size (PowerPAK SO-8) for space-constrained designs.

RoHS3 compliance, ensuring environmental friendliness.