Manufacturer Part Number
SIHFL9110TR-GE3
Manufacturer
Vishay / Siliconix
Introduction
P-Channel Enhancement Mode MOSFET Transistor
Product Features and Performance
100V Drain to Source Voltage
2Ω Maximum On-State Resistance
1A Continuous Drain Current
200pF Maximum Input Capacitance
2W Maximum Power Dissipation at 25°C
-55°C to 150°C Operating Temperature Range
Product Advantages
Low On-State Resistance
High Drain Current Capability
Surface Mount Packaging
Wide Operating Temperature Range
Key Technical Parameters
Drain to Source Voltage: 100V
Maximum Gate-Source Voltage: ±20V
Continuous Drain Current: 1.1A
On-State Resistance: 1.2Ω
Input Capacitance: 200pF
Power Dissipation: 2W
Quality and Safety Features
RoHS3 Compliant
Reliable MOSFET Technology
Compatibility
TO-261-4, TO-261AA Package
Surface Mount Mounting
Application Areas
Power Management
Switching Circuits
Motor Control
Battery Charging
Industrial Electronics
Product Lifecycle
Current production, no discontinuation planned
Compatible replacements and upgrades available
Key Reasons to Choose This Product
Low on-state resistance for improved efficiency
High current capability for demanding applications
Wide operating temperature range for versatility
Surface mount packaging for ease of integration
Reliable MOSFET technology for long-term performance
SIHFR014-E3VBSEMI