Manufacturer Part Number
SIHFB20N50K-E3
Manufacturer
Vishay / Siliconix
Introduction
High-performance N-channel power MOSFET designed for high-voltage, high-power switching applications.
Product Features and Performance
High voltage rating up to 500V
Low on-resistance of 250mΩ @ 12A, 10V
Continuous drain current of 20A at 25°C
High power dissipation of 280W at Tc
Fast switching with low gate charge of 110nC @ 10V
Wide operating temperature range of -55°C to 150°C
Product Advantages
Excellent for high-voltage, high-power switching applications
Efficient power conversion and low power loss
Reliable and robust design for demanding environments
Key Technical Parameters
Drain-Source Voltage (Vdss): 500V
Gate-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 250mΩ @ 12A, 10V
Continuous Drain Current (Id): 20A at 25°C
Power Dissipation (Pd): 280W at Tc
Input Capacitance (Ciss): 2870pF @ 25V
Gate Charge (Qg): 110nC @ 10V
Quality and Safety Features
Rugged and reliable design for high-voltage, high-power applications
Complies with relevant safety and quality standards
Compatibility
Compatible with a wide range of high-voltage, high-power switching applications
Application Areas
Switched-mode power supplies (SMPS)
Motor drives
Inverters
Welding equipment
Industrial and automotive electronics
Product Lifecycle
This product is currently in active production and is not nearing discontinuation.
Replacement or upgrade options may be available from Vishay/Siliconix or other manufacturers.
Key Reasons to Choose This Product
High voltage rating up to 500V for demanding applications
Low on-resistance for efficient power conversion and low power loss
High continuous drain current and power dissipation capabilities
Fast switching with low gate charge for improved efficiency
Reliable and robust design for use in demanding environments
Wide operating temperature range for versatile applications
SiHFB17N50LElectro-Films (EFI) / Vishay