Manufacturer Part Number
SIHF22N60E-GE3
Manufacturer
Vishay / Siliconix
Introduction
High-voltage, low on-resistance N-channel power MOSFET
Product Features and Performance
600V drain-to-source voltage
180mΩ maximum on-resistance
21A continuous drain current
35W maximum power dissipation
Wide operating temperature range of -55°C to 150°C
Low input capacitance of 1920pF
N-channel enhancement-mode MOSFET
Product Advantages
Excellent energy efficiency due to low on-resistance
High power density and compact design
Reliable performance across wide temperature range
Suitable for high-voltage, high-current applications
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 600V
Gate-to-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 180mΩ @ 11A, 10V
Drain Current (Id): 21A @ 25°C
Input Capacitance (Ciss): 1920pF @ 100V
Power Dissipation (Ptot): 35W @ Tc
Quality and Safety Features
RoHS3 compliant
Through-hole TO-220 package
Compatibility
Suitable for various high-voltage, high-current applications such as:
Power supplies
Motor drives
Inverters
Converters
Application Areas
Industrial electronics
Household appliances
Power management
Renewable energy systems
Product Lifecycle
This product is still in active production and is not nearing discontinuation. Replacement or upgrade options are available from the manufacturer.
Key Reasons to Choose This Product
Excellent energy efficiency and low power losses due to low on-resistance
Reliable performance over a wide temperature range
Compact and space-saving design with through-hole mounting
Suitable for a variety of high-voltage, high-current applications
Ongoing product availability and upgrade options from the manufacturer
SiHF520Electro-Films (EFI) / Vishay