SIF912EDZ-T1-E3 - Vishay Siliconix

Manufacturer Part Number

SIF912EDZ-T1-E3

Manufacturer

Vishay / Siliconix

Introduction

Discrete Semiconductor Product

Transistors FETs, MOSFETs Arrays

Product Features and Performance

RoHS3 Compliant

PowerPAK (2x5) package

TrenchFET series

Tape & Reel (TR) package

Operating Temperature: -55°C ~ 150°C (TJ)

Power Max: 1.6W

2 N-Channel (Dual) Common Drain configuration

Drain to Source Voltage (Vdss): 30V

Rds On (Max) @ Id, Vgs: 19mOhm @ 7.4A, 4.5V

MOSFET (Metal Oxide) technology

Current Continuous Drain (Id) @ 25°C: 7.4A

Logic Level Gate FET Feature

Vgs(th) (Max) @ Id: 1.5V @ 250A

Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V

Surface Mount Mounting Type

Product Advantages

RoHS3 compliant

Compact and efficient PowerPAK package

Wide operating temperature range

Dual N-Channel configuration for flexible design

Low on-resistance for improved efficiency

Logic level gate for easy control

Key Technical Parameters

Drain to Source Voltage (Vdss): 30V

Rds On (Max): 19mOhm

Continuous Drain Current (Id): 7.4A

Vgs(th) (Max): 1.5V

Gate Charge (Qg) (Max): 15nC

Quality and Safety Features

RoHS3 compliant

Wide operating temperature range

Compatibility

Suitable for a variety of electronic applications

Application Areas

Suitable for power management, switching, and control circuits in various electronic devices

Product Lifecycle

Currently available product

No known plans for discontinuation

Replacements or upgrades may be available in the future

Key Reasons to Choose This Product

RoHS3 compliance for environmental friendliness

Compact and efficient PowerPAK package

Wide operating temperature range for diverse applications

Dual N-Channel configuration for flexible design

Low on-resistance for improved efficiency

Logic level gate for easy control