SIA931DJ-T1-GE3 - Vishay Siliconix

Manufacturer Part Number

SIA931DJ-T1-GE3

Manufacturer

Vishay / Siliconix

Introduction

Discrete Semiconductor Product

Transistors FETs, MOSFETs Arrays

Product Features and Performance

2 P-Channel (Dual) Configuration

30V Drain to Source Voltage (Vdss)

65mOhm Max Rds On @ 3A, 10V

5A Continuous Drain Current (Id) @ 25°C

445pF Max Input Capacitance (Ciss) @ 15V

2V Max Gate Threshold Voltage (Vgs(th)) @ 250A

13nC Max Gate Charge (Qg) @ 10V

Product Advantages

Logic Level Gate

Surface Mount Mounting

MOSFET (Metal Oxide) Technology

-55°C to 150°C Operating Temperature Range

8W Max Power Dissipation

Key Technical Parameters

RoHS3 Compliant

PowerPAK SC-70-6 Dual Package

Quality and Safety Features

ROHS3 Compliant

Compatibility

Suitable for various electronic applications requiring low on-resistance, high-speed switching, and high power density MOSFETs.

Application Areas

Suitable for various electronic applications such as power supplies, motor drives, and power management circuits.

Product Lifecycle

Currently available product, no indication of discontinuation.

Key Reasons to Choose This Product

Excellent performance characteristics, including low on-resistance, high-speed switching, and high power density.

Wide operating temperature range.

Compact and efficient PowerPAK SC-70-6 Dual package.

Meets RoHS3 compliance requirements.

Suitable for a variety of electronic applications.