Manufacturer Part Number
SIA910EDJ-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
The SIA910EDJ-T1-GE3 is a dual N-channel MOSFET transistor in a PowerPAK SC-70-6 package.
Product Features and Performance
Dual N-channel MOSFET design
Low on-resistance of 28 mOhm @ 5.2A, 4.5V
High continuous drain current of 4.5A @ 25°C
Low input capacitance of 455 pF @ 6V
Logic level gate with a threshold voltage of 1V @ 250 μA
Low gate charge of 16 nC @ 8V
Product Advantages
Compact and space-saving PowerPAK SC-70-6 package
Excellent thermal performance
Suitable for high-frequency switching applications
Reliable and robust design
Key Technical Parameters
Drain to Source Voltage (Vdss): 12V
Operating Temperature Range: -55°C to 150°C
Maximum Power Dissipation: 7.8W
Quality and Safety Features
RoHS3 compliant
Meets industrial-grade quality standards
Compatibility
Suitable for a wide range of electronic devices and applications
Application Areas
Switching power supplies
DC-DC converters
Motor drives
LED drivers
General-purpose power management circuits
Product Lifecycle
Current production model
Replacements and upgrades may be available in the future
Several Key Reasons to Choose This Product
Excellent performance and efficiency due to low on-resistance and gate charge
Compact and space-saving package
Reliable and robust design for industrial-grade applications
Wide operating temperature range and high power handling capability
Suitable for high-frequency switching applications