Manufacturer Part Number
SI9910DY-T1-E3
Manufacturer
Vishay Siliconix
Introduction
A high-side gate driver designed for driving N-Channel MOSFETs in power management applications.
Product Features and Performance
Single channel gate driver for high-side configuration
Supports N-Channel MOSFET Gates
Peak output current 1A source and 1A sink
Non-inverting input type
High side voltage maximum up to 500V with Bootstrap
Fast rise and fall times of 50ns and 35ns respectively
Operational across a wide temperature range from -40°C to 150°C
Product Advantages
Ability to handle high-side voltages enables use in high voltage applications
Fast switching capabilities for improved performance
Robust operating temperature range suitable for demanding environments
Key Technical Parameters
8V to 16.5V supply voltage
Driven Configuration: High-Side
Channel Type: Single
Number of Drivers: 1
Gate Type: N-Channel MOSFET
Current - Peak Output: 1A, 1A
High Side Voltage - Max (Bootstrap): 500V
Rise / Fall Time: 50ns / 35ns
Operating Temperature: -40°C to 150°C
Quality and Safety Features
Designed for reliable operation in a wide temperature range
Compatibility
Compatible with surface mount technology and 8-SOIC package
Application Areas
Power Management Circuits
Switch Mode Power Supplies
Motor Control Systems
High Voltage Gate Driving Applications
Product Lifecycle
Obsolete status implying limited availability and potential for no direct replacements or upgrades
Several Key Reasons to Choose This Product
High side drive capability with a maximum voltage of 500V
Integrated bootstrap feature for driving N-Channel MOSFETs
1A peak current suitable for driving various MOSFETs
Fast switching times enhance overall power efficiency
Operates reliably over a broad temperature spectrum
The surface-mount 8-SOIC package is convenient for PCB design
Sturdy product from a reputable manufacturer, Vishay Siliconix
