SI9435BDY-T1-GE3 - Vishay Siliconix

Manufacturer Part Number

SI9435BDY-T1-GE3

Manufacturer

Vishay / Siliconix

Introduction

Vishay / Siliconix SI9435BDY-T1-GE3 is a P-channel MOSFET in an 8-SOIC package.

Product Features and Performance

Trench MOSFET technology

30V drain-source voltage

42mΩ maximum on-resistance at 10V gate-source voltage

1A continuous drain current at 25°C

3W maximum power dissipation

-55°C to 150°C operating temperature range

Product Advantages

Low on-resistance for efficient power switching

Compact surface mount package

Suitable for a wide range of applications

Key Technical Parameters

Drain-source voltage (Vdss): 30V

Gate-source voltage (Vgs): ±20V

On-resistance (Rds(on)): 42mΩ @ 5.7A, 10V

Drain current (Id): 4.1A @ 25°C

Power dissipation (Pd): 1.3W @ 25°C

Gate charge (Qg): 24nC @ 10V

Quality and Safety Features

RoHS3 compliant

Trench MOSFET technology for high reliability

Compatibility

Suitable for a wide range of applications requiring a P-channel MOSFET in an 8-SOIC package

Application Areas

Power management

Motor control

Switch mode power supplies

General purpose switching

Product Lifecycle

This product is currently in production and not nearing discontinuation.

Replacement or upgrade options may be available from Vishay / Siliconix.

Key Reasons to Choose This Product

Low on-resistance for efficient power switching

Wide operating temperature range

Compact surface mount packaging

Suitable for a variety of power management and switching applications

High reliability with Trench MOSFET technology

RoHS3 compliance for environmentally friendly use