Manufacturer Part Number
SI9433BDY-T1-E3
Manufacturer
Vishay / Siliconix
Introduction
This product is a P-channel Metal Oxide Semiconductor Field-Effect Transistor (MOSFET) from Vishay / Siliconix.
Product Features and Performance
20V Drain to Source Voltage (Vdss)
±12V Gate to Source Voltage (Vgs)
40mOhm maximum On-Resistance (Rds(on)) at 6.2A Drain Current and 4.5V Gate Voltage
5A maximum Continuous Drain Current (Id) at 25°C
3W maximum Power Dissipation at 25°C
14nC maximum Gate Charge (Qg) at 4.5V Gate Voltage
Product Advantages
Low On-Resistance for efficient power conversion
Wide operating temperature range of -55°C to 150°C
Suitable for a variety of power management applications
Key Technical Parameters
MOSFET Technology
P-Channel FET Type
5V maximum Gate Threshold Voltage (Vgs(th)) at 250μA Drain Current
7V to 4.5V Drive Voltage range for Rds(on) performance
Quality and Safety Features
RoHS3 Compliant
8-SOIC (0.154", 3.90mm Width) Package
Tape and Reel Packaging
Compatibility
This MOSFET is a surface mount device compatible with standard SMT assembly processes.
Application Areas
Power management circuits
Motor drives
Switching power supplies
Battery chargers
Industrial controls
Product Lifecycle
This product is an active part and not nearing discontinuation. Replacement and upgrade options are available from Vishay / Siliconix.
Key Reasons to Choose This Product
Excellent on-resistance performance for efficient power conversion
Wide operating temperature range for reliable operation in diverse environments
Compact surface mount package suitable for space-constrained designs
RoHS compliance for use in environmentally-conscious applications