Manufacturer Part Number
SI9410BDY-T1-E3
Manufacturer
Vishay / Siliconix
Introduction
High-performance N-Channel TrenchFET power MOSFET
Product Features and Performance
Drain to Source Voltage (Vdss) of 30V
Vgs (Max) of ±20V
Rds On (Max) of 24mOhm @ 8.1A, 10V
Continuous Drain Current (Id) of 6.2A at 25°C
Power Dissipation (Max) of 1.5W at 25°C
Vgs(th) (Max) of 3V @ 250A
Gate Charge (Qg) (Max) of 23nC @ 10V
Product Advantages
High efficiency due to low on-resistance
Fast switching speed
Robust and reliable performance
Suitable for a wide range of power applications
Key Technical Parameters
MOSFET technology: N-Channel TrenchFET
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Operating Temperature: -55°C to 150°C
Quality and Safety Features
RoHS3 compliant
8-SOIC surface mount package
Compatibility
Suitable for a variety of power electronics and control applications
Application Areas
Power supplies
Motor drives
Switching regulators
Inverters
General power management
Product Lifecycle
Current production model, no known discontinuation plans
Replacement or upgrade options available from the manufacturer
Key Reasons to Choose This Product
High efficiency and low on-resistance for improved system performance
Fast switching capability for high-frequency applications
Robust and reliable operation over a wide temperature range
Compact and easy-to-use surface mount package
Extensive application support and compatibility