SI8851EDB-T2-E1 - Vishay Siliconix

Manufacturer Part Number

SI8851EDB-T2-E1

Manufacturer

Vishay / Siliconix

Introduction

High-performance P-channel TrenchFET MOSFET for power-sensitive applications

Product Features and Performance

High efficiency with low on-resistance

Optimized for portable and battery-operated devices

Wide operating temperature range of -55°C to 150°C

Low input capacitance and gate charge for fast switching

Product Advantages

Excellent performance-to-size ratio

Suitable for power-sensitive applications

Robust and reliable operation across temperature extremes

Efficient switching characteristics

Key Technical Parameters

Drain to Source Voltage (Vdss): 20 V

Gate-Source Voltage (Vgs): ±8V

On-Resistance (Rds(on)): 8 mΩ @ 7A, 4.5V

Continuous Drain Current (Id): 7.7A (at 25°C)

Input Capacitance (Ciss): 6900 pF @ 10 V

Power Dissipation (Pd): 660mW (at 25°C)

Quality and Safety Features

RoHS3 compliant

Suitable for high-reliability applications

Compatibility

Surface mount package (30-XFBGA, Power Micro Foot 2.4x2)

Compatible with standard MOSFET drivers and control circuits

Application Areas

Portable and battery-operated devices

Power management circuits

Switch mode power supplies

Motor drives

General purpose power switching

Product Lifecycle

Currently in production

Replacements and upgrades may be available in the future

Key Reasons to Choose This Product

Excellent performance-to-size ratio for power-sensitive applications

Wide operating temperature range for robust and reliable operation

Low input capacitance and gate charge for efficient switching

Proven Vishay / Siliconix quality and reliability