Manufacturer Part Number
SI8410DB-T2-E1
Manufacturer
Vishay / Siliconix
Introduction
Discrete Semiconductor Product
N-Channel MOSFET Transistor
Product Features and Performance
TrenchFET Series
20V Drain-Source Voltage
37mOhm Max On-Resistance @ 1.5A, 4.5V
8A Continuous Drain Current @ 25°C
620pF Max Input Capacitance @ 10V
780mW Max Power Dissipation @ 25°C
16nC Max Gate Charge @ 8V
Product Advantages
Low on-resistance for improved efficiency
High current capability
Compact 4-UFBGA package
Key Technical Parameters
Vgs (Max): ±8V
Vgs(th) (Max) @ Id: 850mV @ 250A
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Operating Temperature: -55°C to 150°C
Quality and Safety Features
ROHS3 Compliant
Compatibility
Surface Mount Mounting
Application Areas
Power Management
Automotive
Industrial
Consumer Electronics
Product Lifecycle
Currently in production
No plans for discontinuation
Key Reasons to Choose
Excellent performance-to-size ratio
High reliability and durability
Cost-effective solution
Wide operating temperature range