Manufacturer Part Number
SI7942DP-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
This is a Dual N-Channel TrenchFET MOSFET product from Vishay/Siliconix.
Product Features and Performance
MOSFET (Metal Oxide Semiconductor Field Effect Transistor) technology
Dual N-Channel configuration
Logic Level Gate
PowerPAK SO-8 Dual package
Operates in temperature range of -55°C to 150°C
Product Advantages
High power efficiency
Compact and space-saving design
Reliable performance in harsh environments
Key Technical Parameters
Drain to Source Voltage (Vdss): 100V
On-Resistance (Rds(on)): 49mΩ @ 5.9A, 10V
Continuous Drain Current (Id): 3.8A @ 25°C
Gate Threshold Voltage (Vgs(th)): 4V @ 250μA
Gate Charge (Qg): 24nC @ 10V
Quality and Safety Features
RoHS3 compliant
Meets quality and reliability standards
Compatibility
This MOSFET is compatible with a wide range of electronic circuits and applications.
Application Areas
Power management
Motor control
Switching applications
Industrial and consumer electronics
Product Lifecycle
This product is currently in production and widely available. Vishay/Siliconix continues to offer updates and improvements to the TrenchFET series.
Key Reasons to Choose This Product
Excellent power efficiency and performance
Reliable operation in harsh environments
Compact and space-saving design
Compatibility with a wide range of applications
Ongoing support and updates from the manufacturer