Manufacturer Part Number
SI7860DP-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
Discrete Semiconductor Product
N-Channel MOSFET Transistor
Product Features and Performance
Trench MOSFET technology
Low on-resistance
High current handling capability
Wide operating temperature range (-55°C to 150°C)
Product Advantages
Excellent thermal management
Efficient power delivery
Reliable performance
Key Technical Parameters
Drain to Source Voltage (Vdss): 30 V
Gate to Source Voltage (Vgs): ±20 V
On-Resistance (Rds(on)): 8 mOhm @ 18 A, 10 V
Continuous Drain Current (Id): 11 A @ 25°C
Power Dissipation (Max): 1.8 W @ 25°C
Gate Charge (Qg): 18 nC @ 4.5 V
Quality and Safety Features
RoHS3 compliant
Reliable and durable construction
Compatibility
Surface mount package (PowerPAK SO-8)
Compatible with various electronic applications
Application Areas
Power supplies
Motor drives
Switching circuits
Industrial and automotive electronics
Product Lifecycle
Currently available
No information on discontinuation or replacement
Key Reasons to Choose This Product
Excellent thermal management and power handling
Reliable and efficient performance
Wide operating temperature range
Compact and versatile surface mount package
SI7860DP-T1Electro-Films (EFI) / Vishay