Manufacturer Part Number
SI7858ADP-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
N-channel enhancement-mode field-effect transistor (MOSFET) in a PowerPAK SO-8 package
Product Features and Performance
Trench MOSFET technology
12 V drain-to-source voltage
6 mΩ maximum on-resistance at 29 A, 4.5 V
20 A continuous drain current at 25°C
5700 pF maximum input capacitance at 6 V
9 W maximum power dissipation at 25°C
Product Advantages
Efficient power conversion
Low on-resistance for low power loss
Compact and space-saving PowerPAK SO-8 package
Key Technical Parameters
Drain-to-source voltage (Vdss): 12 V
Gate-to-source voltage (Vgs): ±8 V
On-resistance (Rds(on)): 2.6 mΩ @ 29 A, 4.5 V
Continuous drain current (Id): 20 A at 25°C
Input capacitance (Ciss): 5700 pF @ 6 V
Power dissipation (Pd): 1.9 W at 25°C
Quality and Safety Features
RoHS3 compliant
Suitable for harsh environments with operating temperature range of -55°C to 150°C
Compatibility
Compatible with various electronic circuits and power management applications
Application Areas
Switching power supplies
Motor drives
Power amplifiers
Battery chargers
Automotive electronics
Product Lifecycle
This product is currently in production and not nearing discontinuation.
Replacement or upgrade options may be available from the manufacturer.
Key Reasons to Choose This Product
Efficient power conversion with low on-resistance
Compact and space-saving PowerPAK SO-8 package
Wide operating temperature range suitable for harsh environments
Suitable for various power management applications